inchange semiconductor product specification silicon pnp power transistor 2SB885 description ? with to-220c package ? darlington ? high dc durrent gain ? low collector saturation voltage ? complement to type 2sd1195 applications ? for motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -110 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -6 v i c collector current-dc -5 a i cm collector current-pulse -8 a t c =25 ?? 35 p c collector power dissipation t a =25 ?? 1.75 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistor 2SB885 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma, r be = ?t -100 v v (br)cbo collector-base breakdown voltage i c =-5ma, i e =0 -110 v v cesat collector-emitter saturation voltage i c =-2.5a ,i b =-5ma -1.5 v v be sat base-emitter saturation voltage i c =-2.5a ,i b =-5ma -2.0 v i cbo collector cut-off current v cb =-80v, i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -3.0 ma h fe dc current gain i c =-2.5a ; v ce =-3v 1500 f t transition frequency v ce =-5v, i c =-2.5a 20 mhz switching times t on turn-on time 0.7 | s t stg storage time 1.3 | s t f turn-off time i c =-2a ; v cc =-50v i b1 =-i b2 =-4ma;r l =25 |? 1.5 | s
inchange semiconductor product specification 3 silicon pnp power transistor 2SB885 package outline fig.2 outline dimensions
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